This project will investigate the microstructural mechanisms that enable quantum sensing and photon emission in gallium oxide (Ga₂O₃). Ga₂O₃ is a highly promising wide-bandgap semiconductor for advanced optoelectronic, power electronics, and quantum applications [1]. Its ultra-high sensitivity in the deep ultraviolet (UV) region [2] makes it ideal for single-photon detection, and recent studies demonstrate that it can host room-temperature single-photon emitters [3, 4] – key features for future quantum systems.

Despite these advantages, the fundamental mechanisms behind these properties remain poorly understood, limiting efforts to optimise Ga₂O₃ for quantum technologies. This project will address that gap by exploring how crystallographic defects and impurities govern the material’s optical and electronic behaviour within real device architectures.

The student will work on Ga₂O₃-based UV sensors provided by NextGO Epi and other academic collaborators, employing advanced characterisation techniques to link microstructure to performance. These include electron microscopy to probe nanoscale structure, luminescence and chemistry, photoluminescence to study emission properties, and photoconduction to assess charge transport and device sensitivity. By correlating structural and functional data from actual devices, the project aims to build a comprehensive understanding of how microstructure drives quantum phenomena in Ga₂O₃. This device-centric approach ensures that findings are relevant to practical applications.

The outcomes will provide critical insights for designing next-generation materials and device architectures for quantum sensing and communication. Beyond advancing fundamental science, the results will inform industrial strategies for material growth and fabrication, accelerating the deployment of Ga₂O₃-based systems in real-world quantum technologies.