This project aims to overcome performance variability in silicon carbide (SiC) colour centres—atomic defects that serve as quantum memories and sensors—by tuning their optical properties in situ. The approach uses optomechanical cavities to control emission via the Purcell effect and mechanical deformation for fine tuning, enabling indistinguishable photon emission for quantum communication protocols.
Key aspects:
- Research focus: Develop SiC-based optomechanical devices for scalable quantum technologies.
- Techniques: Simulation, design, microfabrication, and laboratory characterisation of integrated photonic circuits.
- Platform: SiC-on-insulator (SiCOI) substrates for waveguides and resonators; colour centres created via ion implantation at the UK National Ion Beam Centre.
- Impact: Enables tunable quantum emitters for entanglement-based communication and sensing.